Perspective Material for Photoenergetics on the Basis of Silicon with Binary Elementary Cells

M. K. Bakhadyrkhanov; U. X. Sodikov; Kh. M. Iliev; S. A. Tachilin; Tuerdi Wumaier

doi:10.18282/mpc.v1i1.569

M. K. Bakhadyrkhanov 1 Tashkent State Technical University, 100095, Tashkent, Uzbekistan
U. X. Sodikov Tashkent State Technical University, 100095, Tashkent, Uzbekistan.
Kh. M. Iliev Tashkent State Technical University, 100095, Tashkent, Uzbekistan.
S. A. Tachilin Tashkent State Technical University, 100095, Tashkent, Uzbekistan.
Tuerdi Wumaier 2 Xinjiang Institute of Engineering, 830023, Urumchi, China

Ariticle ID: 569

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DOI: https://doi.org/10.18282/mpc.v1i1.569

Keywords: Semiconductor, Binary clusters, Muticascade PV Cells, Elementary Cells, Self-Organization, Self-Structure, Nanostructure, Nanocrystal, Photosensivity, Combinations, Multistage PV cells

Abstract

The paper proposes a scientifically-grounded, principally-new approach to managing the fundamental parameters of the basic material of electronic engineering as like silicon. The essence of the proposed approach is the formation of binary elementary cells in the silicon lattice involving elements III (B, Al, Ga, Zn) and V (P, As, Sb) groups in the form of Si2GaAs, Si2GaSb, etc. Taking electrical and chemical parameters of these impurity atoms into account, as well as their diffusion parameters in Si, the formation is determined by the most suitable pairs of atoms of groups III and V that allow obtaining silicon with the necessary composition and structure of binary elementary cells, as well as their more complex associations, up to the formation of nanocrystals of semiconductor connections AIIIBV. It is shown that by controlling the composition, structure and concentration of binary elementary cells, it is possible to significantly expand the spectral sensitivity of silicon, both in the IR and hÎ» > Eg directions. The formation of nanoclusters of AIIIBV semiconductor compounds in the silicon lattice significantly changes the emissivity of the material. It is established that the successive diffusion of elements of groups III and V in silicon and additional low-temperature annealing under certain thermodynamic conditions make it possible to ensure the maximum participation of the impurity atoms introduced in the formation of binary elementary cells. Silicon with binary elementary cells involving atoms of groups III and V is a new class of semiconductor material with unique functionality for modern optoelectronics and photoenergetics.

References

Tonio Buonassisi/Introduction to fundamentals of photovoltaics/ocw.mit.edu

Ch. P. Poole, Jr. F. J. Owens/Introduction to nanotechnology/Publsh. by J. Wiley & Sons, Inc. Hoboken. New Jersey/USA, 2003.

Alan II., Fahrenbruch, Richard H. Bube/Fundamentals of solar cells/Photovoltaic solar energy conversion/New York, 1998.

J. Emsley/The elements/ Clarendon Press, Oxford, 1991.

M.G. Milvidskii, V.V. Chaldishev/Nanoscale atomic clusters in semiconductors as a new approach to formation of materials properties/Semiconductors, 1998, No 5.pp. 513-522.

T. Sekuguchi, S. Yoshida, K.M. Itoh/Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal

Si(111) surface/Phys.Rev.Lett.95, 106101 (2005).

F.F. Komarov, O.I. Velichko, V.A. Dobrushkin, A.M. Mironov/Mechanisms of arsenic clustering in silicon/Phys. Rev. B. Vol.74 (3), Art. no. 035205 (2006).

Chuanyun Xiao, Jessica Blundell, Frank Hagelberg and William A., Lester J./Silicon clusters doped with an yttrium metal atom impurity/International Journal of Quantum Chemistry, Vol 96, Issue 4, pages 416-425, 2004.

M.K. Bakhadyrhanov, K.S. Aypov, Kh.M. Iliev, G.Kh. Mavlonov, and O.E. Sattorov/Effect of electric field, illumination, and temperature on the negative magnetoresistance of low-temperature-diffusion-doped silicon/Technical Physics Letters, 2009, Vol. 35, No. 8, pp 741-744.

M.K. Bakhadyrhanov, Sh.I. Askarov, and N. Norkulov/Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon/Phys. stat. sol. (a) 142, 339 (1994).

M.K. Bakhadyrhanov, K.S. Aypov, G.Kh. Mavlonov, and S.B. Isamov/Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4/Semiconductors, 2010, Vol. 44, No. 9. pp. 1145-1148.

C. Hilsum, A.C. Rose-innes/Semiconducting III-V compounds/Oxford, London, 1961.

R. K. Wilardson, H. L. Goering/Compound semiconductors preparation of III-V compounds/Chapman&Hall, Ltd., London, 1965.

M.S. Saidov/Concentrated semiconductor solid solutions of compounds and possibility of realization in-band-cascade devices/Applied Solar Energy, 2001, 1, p. 3-9.

M.S. Saidov/The possibility of the formation of continuous solid solutions of silicon and germanium with compounds with defective diamond-like structures/ Applied Solar Energy, 2002, 2.

B.A. Abdurakhmanov, M.K.Bakhadyrhanov, K.S. Aypov, H.M. Iliev, E.B. Saitov, A. Mavlonov, U.H. Kamalov/Formation of clusters of impurity atoms of nickel in silicon and controlling their parameters/Nanosciens and nanotechnology, 2014, 4(2): 23-26.

M.K. Bakhadyrhanov and S.B. Isamov/IR Photodetectors operating under background illumination/Technical Physics, 2016, Vol. 61, No 3., pp. 458-460.

Z.A. Yunusov, Sh.U. Yuldashev, Kh. T. Igamberdiev, Y.H. Kwos and T.W. Kang M.K.Bakhadyrhanov, S.B. Isamov and N.F. Zikrillaev/Journal of the Korean Physical Society, Vol. 64, No. 10, May 2014, pp. 1461-1465.

M. K. Bakhadyrkhanov, A. Sh. Mavlyanov, U. Kh. Sodikov, and M. K. Khakkulov/Silicon with Binary Elementary Cells as a Novel Class of Materials for Future Photoenergetics/Applied Solar Energy, 2015, Vol. 51, No. 4, pp. 258â€“261.

M.K. Bakhadyrhanov, S.A. Valiev, N.F. Zikrillaev, S.V. Kaveshnikov, E.B. Saitov, and S.A. Tachilin/Silicon photovoltaic cells with clusters of nickel atoms/Applied solar energy, 2016, Vol. 52, No 4, pp. 278-2