The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes

  • Shahlar Gachayogli Askerov Baku State University , Institute of Problems of Physics Baku, Azerbaijan
  • M. G. Gasanov Baku State University , Institute of Problems of Physics Baku, Azerbaijan
  • L. KAbdullayeva Baku State University , Institute of Problems of Physics Baku, Azerbaijan
Ariticle ID: 565
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DOI: https://doi.org/10.18282/mpc.v1i1.565
Keywords: Schottky diode, Metal-semiconductor contact, Interface, Barrier height, Breakdown voltage

Abstract

In this paper, the influence of the microstructure of a metal on the breakdown mechanism of diodes with a Schottky barrier is studied. It is shown that in electronic processes occurring in the contact between a metal and a semi-conductor, the metal plays a very active role and is a more important contact partner than a semiconductor. Unlike the known mechanisms of breakdown of diodes (avalanche, tunnel and thermal), another mechanism is proposed in this paper - the geometric mechanism of the reverse current flow of Schottky diodes made using a metal with a poly-crystalline structure. The polycrystallinity of a metal transforms a homogeneous contact into a complex system, which consists of parallel-connected multiple elementary contacts having different properties and parameters.

References

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984), chap. 1, p. 34.

M.P. Lepseiter, S.M.Sze, Bell. Syst.Tech. 1968, J 47, p.195.

Askerov Sh.G., Report lab. For semiconductor devices Properties of Al-nSi Schottky barrier diodes. 1974, TUD, Lyngby.p.1-22

ÐÑкеров Ш.Г., МиkроÑлектроника, Вольт Ð°Ð¼Ð¿ÐµÑ€Ð½Ð°Ñ Ñ…Ð°Ñ€Ð°ÐºÑ‚ÐµÑ€Ð¸Ñтика диодов Шоттки в обратном направлении. 1977. Эт.Ñер.93. Ñ‚.1. â„–17, Ñ.63-66

Afandiyeva I.M., Altındal Ş., Abdullayeva L.K. Illumination dependent electrical characteristics of PtSi/n-Si(111) Schottky Barrier Diodes (SBDs) at room temperature, Journal of Modern Technology & Engineering, vol.2, No.1,

p.43-56, 2017

Шишкин Б.Б., Метод Ð¸Ð·Ð¼ÐµÑ€ÐµÐ½Ð¸Ñ Ñ‚ÐµÑ€Ð¼Ð¾Ñлектронной ÑмиÑÑии «пÑтниÑтых» катодов. 1985. Радиотехника и Ñлектроника, Ñ‚.ХХХ, вып.4, Ñ.788-792.

Sh. G. Askerov and G. G. Kadimov, Izv. Akad. Nauk AzSSR, Ser. Fiz.-Tekh. Mat. Nauk, No. 2, 21 (1986).

Шахлар ÐÑкеров, Физика неоднородного контакта металл –полупроводник, Lambert Academic Publishing,

p.77, 2017

V. S. Fomenko, Emission Properties of Materials (Nauk. Dumka, Kiev, 1981), p.146 [in Russian].

Askerov, S.Q., Abdullayeva, L.K., M.H. Hasanov, Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions Semiconductors (2017) 51: 591-593.

ÐÑкеров Ш.Г. ГеометричеÑкий механизм Ð¿Ñ€Ð¾Ð±Ð¾Ñ Ð´Ð¸Ð¾Ð´Ð¾Ð² Шоттки. 1982.Тем. Ñб. ÐГУ Электронные ÑÐ²Ð»ÐµÐ½Ð¸Ñ Ð² твердых телах и газах, Баку. Ñ.25-54.

A. Yu. Loskutov and M. S. Mikhailov, Principles of the Complex System Theory (Moscow, Izhevsk, 2007), p. 17 [in Russian].

Published
2022-10-15
How to Cite
Askerov, S. G., Gasanov, M. G., & KAbdullayeva, L. (2022). The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes. Materials Physics and Chemistry, 4(1), 1-6. https://doi.org/10.18282/mpc.v1i1.565
Issue
Vol. 4 No. 1 (2022)
Section
Editorial

Copyright (c) 2022 Shahlar Gachayogli Askerov, M. G. Gasanov, L. KAbdullayeva

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