The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes

  • Shahlar Gachayogli Askerov Baku State University , Institute of Problems of Physics Baku, Azerbaijan
  • M. G. Gasanov Baku State University , Institute of Problems of Physics Baku, Azerbaijan
  • L. KAbdullayeva Baku State University , Institute of Problems of Physics Baku, Azerbaijan
Ariticle ID: 565
806 Views, 29 PDF Downloads
DOI: https://doi.org/10.18282/mpc.v1i1.565
Keywords: Schottky diode, Metal-semiconductor contact, Interface, Barrier height, Breakdown voltage

Abstract

In this paper, the influence of the microstructure of a metal on the breakdown mechanism of diodes with a Schottky barrier is studied. It is shown that in electronic processes occurring in the contact between a metal and a semi-conductor, the metal plays a very active role and is a more important contact partner than a semiconductor. Unlike the known mechanisms of breakdown of diodes (avalanche, tunnel and thermal), another mechanism is proposed in this paper - the geometric mechanism of the reverse current flow of Schottky diodes made using a metal with a poly-crystalline structure. The polycrystallinity of a metal transforms a homogeneous contact into a complex system, which consists of parallel-connected multiple elementary contacts having different properties and parameters.

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Published
2022-10-15
How to Cite
Askerov, S. G., Gasanov, M. G., & KAbdullayeva, L. (2022). The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes. Materials Physics and Chemistry, 4(1), 1-6. https://doi.org/10.18282/mpc.v1i1.565
Issue
Vol. 4 No. 1 (2022)
Section
Editorial

Copyright (c) 2022 Shahlar Gachayogli Askerov, M. G. Gasanov, L. KAbdullayeva

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