An Analyses of Schottky Structure with Lead Monoxide Layer

  • Sema BO
  • Ugur G
Ariticle ID: 528
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Keywords: Oxide layer, Schottky barrier diode, electrical properties, interface states

Abstract

Al/ lead monoxide (PbO) /p-Si structures were consructed to research the electrical properties of PbO interlayer and the conductance-voltage (G-V) and capacitance-voltage (C-V) characteristics of these structures at room temperature have been studied at 600kHz, 800kHz and 1MHz. The study of barrier height  , series resistance (Rs) and interface states density (Dit) using G-V and C-V graphs in these structures has been reported. G and C measurements were obtained to be dependent on frequency and bias voltage.
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