An Analyses of Schottky Structure with Lead Monoxide Layer

Sema BO, Ugur G

Abstract


Al/ lead monoxide (PbO) /p-Si structures were consructed to research the electrical properties of PbO interlayer and the conductance-voltage (G-V) and capacitance-voltage (C-V) characteristics of these structures at room temperature have been studied at 600kHz, 800kHz and 1MHz. The study of barrier height  , series resistance (Rs) and interface states density (Dit) using G-V and C-V graphs in these structures has been reported. G and C measurements were obtained to be dependent on frequency and bias voltage.

Keywords


Oxide layer, Schottky barrier diode, electrical properties, interface states

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DOI: http://dx.doi.org/10.1828/cmr.v6i3.528

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Copyright (c) 2018 Sema BO, Ugur G

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