Microstructure and performances of ITO film prepared by ion beam sputtering
Abstract
Ion beam sputtering deposition was firstly introduced to prepare indium tin oxide (ITO) film in this study. The ITO film was annealed at different temperature in a flow of nitrogen or air, respectively. The effect of annealing process on the microstructure, optical and electrical performances of the ITO film was studied. The results showed that the crystallinity and optical properties of the ITO film were improved with the increase of annealing temperature. The transmittance of the ITO film in visible regions increased up to 96% after it was annealed at 500℃ in nitrogen or in air. It was found that the resistivity of ITO film depended on both the annealing temperature and the annealing atmosphere, which showed a close relationship to the atomic percentage’s sum of oxygen vacancy and Sn4+, which was quantified by XPS result.Copyright (c) 2018 Ping C
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
Authors contributing to this journal agree to publish their articles under the Creative Commons Attribution-Noncommercial 4.0 International License, allowing third parties to share their work (copy, distribute, transmit) and to adapt it, under the condition that the authors are given credit, that the work is not used for commercial purposes, and that in the event of reuse or distribution, the terms of this license are made clear. With this license, the authors hold the copyright without restrictions and are allowed to retain publishing rights without restrictions as long as this journal is the original publisher of the articles.
